1

Motorola Bipolar Power Transistor Device Data

Plastic Medium Power Silicon

NPN Transistor

. . . designed for use as audio amplifiers and drivers utilizing complementary or quasi

complementary circuits.

• DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc

• BD 165, 169 are complementary with BD 166, 168, 170

MAXIMUM RATINGS

Rating

Symbol

Type

Value

Unit

Collector–Emitter Voltage

VCEO

BD 165

BD 169

45

80

Collector–Base Voltage

VCBO

BD 165

BD 169

45

80

Vdc

Emitter–Base Voltage

VEBO

5

Vdc

Collector Current

IC

1.5

Adc

Base Current

IB

0.5

Adc

Total Device Dissipation @ TA = 25_C

Derate above 25

_C

PD

1.25

8

Watts

mW/

_C

Total Device Dissipation @ TC = 25_C

Derate above 25

_C

PD

20

160

Watt

mW/

_C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 65 to + 150

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

θJC

6.25

_C/W

Thermal Resistance, Junction to Ambient

θJA

100

_C/W

Characteristic

Symbol

Type

Min

Max

Unit

Collector–Emitter Sustaining Voltage*

(IC = 0.1 Adc, IB = 0)

BVCEO

BD 165

BD 169

45

80

—

—

Vdc

Collector Cutoff Current

(VCB = 45 Vdc, IE = 0)

(VCB = 80 Vdc, IE = 0)

ICBO

BD 165

BD 169

—

—

0.1

0.1

mAdc

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

IEBO

—

1.0

mAdc

DC current Gain

(IC = 0.15 A, VCE = 2 V)

(IC = 0.5 A, VCE = 2 V)

hFE*

40

15

—

—

Collector–Emitter Saturation Voltage*

(IC = 0.5 Adc, IB = 0.05 Adc)

VCE(sat)*

—

0.5

Vdc

Base–Emitter On Voltage*

(IC = 0.5 Adc, VCE = 2.0 Vdc)

VBE(on)*

—

0.95

Vdc

Current Gain–Bandwidth Product

(IC = 500 mAdc, VCE = 2 Vdc,

f = 1.0 MHz)

fT

6.0

—

MHz

* Pulse Test: Pulse Width

x 300 µs, Duty Cycle x 2.0%.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by BD165/D

BD165

BD169

1.5 AMPERE

POWER TRANSISTORS

NPN SILICON

45, 60, 80 VOLTS

20 WATTS

CASE 77–08

TO–225AA TYPE

REV 7