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BD165 Datasheet(PDF) 1 Page - Motorola, Inc |
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BD165 Datasheet(HTML) 1 Page - Motorola, Inc |
1 / 4 page 1 Motorola Bipolar Power Transistor Device Data Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc • BD 165, 169 are complementary with BD 166, 168, 170 MAXIMUM RATINGS Rating Symbol Type Value Unit Collector–Emitter Voltage VCEO BD 165 BD 169 45 80 Collector–Base Voltage VCBO BD 165 BD 169 45 80 Vdc Emitter–Base Voltage VEBO 5 Vdc Collector Current IC 1.5 Adc Base Current IB 0.5 Adc Total Device Dissipation @ TA = 25_C Derate above 25 _C PD 1.25 8 Watts mW/ _C Total Device Dissipation @ TC = 25_C Derate above 25 _C PD 20 160 Watt mW/ _C Operating and Storage Junction Temperature Range TJ, Tstg – 65 to + 150 _C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case θJC 6.25 _C/W Thermal Resistance, Junction to Ambient θJA 100 _C/W ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Type Min Max Unit Collector–Emitter Sustaining Voltage* (IC = 0.1 Adc, IB = 0) BVCEO BD 165 BD 169 45 80 — — Vdc Collector Cutoff Current (VCB = 45 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) ICBO BD 165 BD 169 — — 0.1 0.1 mAdc Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO — 1.0 mAdc DC current Gain (IC = 0.15 A, VCE = 2 V) (IC = 0.5 A, VCE = 2 V) hFE* 40 15 — — Collector–Emitter Saturation Voltage* (IC = 0.5 Adc, IB = 0.05 Adc) VCE(sat)* — 0.5 Vdc Base–Emitter On Voltage* (IC = 0.5 Adc, VCE = 2.0 Vdc) VBE(on)* — 0.95 Vdc Current Gain–Bandwidth Product (IC = 500 mAdc, VCE = 2 Vdc, f = 1.0 MHz) fT 6.0 — MHz * Pulse Test: Pulse Width x 300 µs, Duty Cycle x 2.0%. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD165/D © Motorola, Inc. 1995 BD165 BD169 1.5 AMPERE POWER TRANSISTORS NPN SILICON 45, 60, 80 VOLTS 20 WATTS CASE 77–08 TO–225AA TYPE REV 7 |
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