BD139 datasheet(2/4 Pages) MOTOROLA

Part #	BD139

Description	Plastic Medium Power Silicon NPN Transistor

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Manufacturer	MOTOROLA [Motorola, Inc]

Direct Link	http://www.freescale.com

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BD135 BD137 BD139

2

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Type

Min

Max

UnIt

Collector–Emitter Sustaining Voltage*

(IC = 0.03 Adc, IB = 0)

BVCEO*

BD 135

BD 137

BD 139

45

60

80

—

Vdc

Collector Cutoff Current

(VCB = 30 Vdc, IE = 0)

(VCB = 30 Vdc, IE = 0, TC = 125_C)

ICBO

—

0.1

10

µAdc

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

IEBO

—

10

µAdc

DC Current Gain

(IC = 0.005 A, VCE = 2 V)

(IC = 0.15 A, VCE = 2 V)

(IC = 0.5 A VCE = 2 V)

hFE*

25

40

25

—

250

—

Collector–Emitter Saturation Voltage*

(IC = 0.5 Adc, IB = 0.05 Adc)

VCE(sat)*

—

0.5

Vdc

Base–Emitter On Voltage*

(IC = 0.5 Adc, VCE = 2.0 Vdc)

VBE(on)*

—

1

Vdc

* Pulse Test: Pulse Width

x 300 µs, Duty Cycle x 2.0%.

10.0

1

Figure 1. Active–Region Safe Operating Area

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

5.0

2.0

1.0

0.5

0.01

2

5

10

20

80

BD135

BD137

BD139

50

0.1

0.05

TJ = 125°C

dc

5 ms

0.5 ms

0.1 ms

0.02

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