1

Motorola Bipolar Power Transistor Device Data

Plastic Medium Power Silicon

NPN Transistor

. . . designed for use as audio amplifiers and drivers utilizing complementary or quasi

complementary circuits.

• DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc

• BD 135, 137, 139 are complementary with BD 136, 138, 140

MAXIMUM RATINGS

Rating

Symbol

Type

Value

Unit

Collector–Emitter Voltage

VCEO

BD 135

BD 137

BD 139

45

60

80

Vdc

Collector–Base Voltage

VCBO

BD 135

BD 137

BD 139

45

60

100

Vdc

Emitter–Base Voltage

VEBO

5

Vdc

Collector Current

IC

1.5

Adc

Base Current

IB

0.5

Adc

Total Device Dissipation @ TA = 25_C

Derate above 25

_C

PD

1.25

10

Watts

mW/

_C

Total Device Dissipation @ TC = 25_C

Derate above 25

_C

PD

12.5

100

Watt

mW/

_C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 55 to + 150

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

θJC

10

_C/W

Thermal Resistance, Junction to Ambient

θJA

100

_C/W

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by BD135/D

BD135

BD137

BD139

1.5 AMPERE

POWER TRANSISTORS

NPN SILICON

45, 60, 80 VOLTS

10 WATTS

CASE 77–08

TO–225AA TYPE

REV 7