MCH3914

No. A1511-1/4

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are

not guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer

's products or equipment. To verify symptoms and states that cannot be evaluated in an

independent device, the customer should always evaluate and test devices mounted in the customer

's

products or equipment.

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not

be intended for use for any "special application" (medical equipment whose purpose is to sustain life,

aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal

system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten

human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they

grant any guarantee thereof. If you should intend to use our products for applications outside the standard

applications of our customer who is considering such use and/or outside the scope of our intended standard

applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the

intended use, our customer shall be solely responsible for the use.

Features

•

| yfs | is large.

•

Ciss is small.

•

Small package.

•

FBET process.

•

Halogen free compliance.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Drain-to-Source Voltage

VDSX

15

V

Gate-to-Drain Voltage

VGDS

--15

V

Gate Current

IG

5mA

Drain Current

ID

50

mA

Allowable Power Dissipation

PD

300

mW

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Gate-to-Drain Breakdown Voltage

V(BR)GDS

IG=--10μA, VDS=0V

--15

V

Gate-to-Source Leakage Current

IGSS

VGS=--10V, VDS=0V

--1.0

nA

Cutoff Voltage

VGS(off)

VDS=5V, ID=10μA

--0.6

--1.4

--3.0

V

Continued on next page.

Ordering number : ENA1511

72209AC TK IM TC-00002014

SANYO Semiconductors

DATA SHEET

MCH3914

N-Channel Junction Silicon FET

High-Frequency Amplifier,

Analog Switch Applications

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