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BC550C Datasheet(PDF) 2 Page - Motorola, Inc |
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BC550C Datasheet(HTML) 2 Page - Motorola, Inc |
2 / 4 page BC549B,C BC550B,C 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC = 10 µAdc, VCE = 5.0 Vdc) BC549B/550B BC549C/550C (IC = 2.0 mAdc, VCE = 5.0 Vdc) BC549B/550B BC549C/550C hFE 100 100 200 420 150 270 290 500 — — 450 800 — Collector – Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 10 mAdc, IB = see note 1) (IC = 100 mAdc, IB = 5.0 mAdc, see note 2) VCE(sat) — — — 0.075 0.3 0.25 0.25 0.6 0.6 Vdc Base–Emitter Saturation Voltage (IC = 100 mAdc, IB = 5.0 mAdc) VBE(sat) — 1.1 — Vdc Base–Emitter On Voltage (IC = 10 µAdc, VCE = 5.0 Vdc) (IC = 100 µAdc, VCE = 5.0 Vdc) (IC = 2.0 mAdc, VCE = 5.0 Vdc) VBE(on) — — 0.55 0.52 0.55 0.62 — — 0.7 Vdc SMALL–SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) fT — 250 — MHz Collector–Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Ccbo — 2.5 — pF Small–Signal Current Gain (IC = 2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz) BC549B/BC550B BC549C/BC550C hfe 240 450 330 600 500 900 — Noise Figure (IC = 200 µAdc, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz) (IC = 200 µAdc, VCE = 5.0 Vdc, RS = 100 kΩ, f = 1.0 kHz) NF1 NF2 — — 0.6 — 2.5 10 dB NOTES: 1. IB is value for which IC = 11 mA at VCE = 1.0 V. 2. Pulse test = 300 µs – Duty cycle = 2%. RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model |
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