BC549B,C BC550B,C

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS

DC Current Gain

(IC = 10 µAdc, VCE = 5.0 Vdc)

BC549B/550B

BC549C/550C

(IC = 2.0 mAdc, VCE = 5.0 Vdc)

BC549B/550B

BC549C/550C

hFE

100

100

200

420

150

270

290

500

—

—

450

800

—

Collector – Emitter Saturation Voltage

(IC = 10 mAdc, IB = 0.5 mAdc)

(IC = 10 mAdc, IB = see note 1)

(IC = 100 mAdc, IB = 5.0 mAdc, see note 2)

VCE(sat)

—

—

—

0.075

0.3

0.25

0.25

0.6

0.6

Vdc

Base–Emitter Saturation Voltage

(IC = 100 mAdc, IB = 5.0 mAdc)

VBE(sat)

—

1.1

—

Vdc

Base–Emitter On Voltage

(IC = 10 µAdc, VCE = 5.0 Vdc)

(IC = 100 µAdc, VCE = 5.0 Vdc)

(IC = 2.0 mAdc, VCE = 5.0 Vdc)

VBE(on)

—

—

0.55

0.52

0.55

0.62

—

—

0.7

Vdc

SMALL–SIGNAL CHARACTERISTICS

Current – Gain — Bandwidth Product

(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)

fT

—

250

—

MHz

Collector–Base Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Ccbo

—

2.5

—

pF

Small–Signal Current Gain

(IC = 2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz)

BC549B/BC550B

BC549C/BC550C

hfe

240

450

330

600

500

900

—

Noise Figure

(IC = 200 µAdc, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz)

(IC = 200 µAdc, VCE = 5.0 Vdc, RS = 100 kΩ, f = 1.0 kHz)

NF1

NF2

—

—

0.6

—

2.5

10

dB

NOTES:

1. IB is value for which IC = 11 mA at VCE = 1.0 V.

2. Pulse test = 300

µs – Duty cycle = 2%.

RS

in

en

IDEAL

TRANSISTOR

Figure 1. Transistor Noise Model