1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Low Noise Transistors

NPN Silicon

MAXIMUM RATINGS

Rating

Symbol

BC549

BC550

Unit

Collector – Emitter Voltage

VCEO

30

45

Vdc

Collector – Base Voltage

VCBO

30

50

Vdc

Emitter – Base Voltage

VEBO

5.0

Vdc

Collector Current — Continuous

IC

100

mAdc

Total Device Dissipation @ TA = 25°C

Derate above 25

°C

PD

625

5.0

mW

mW/

°C

Total Device Dissipation @ TC = 25°C

Derate above 25

°C

PD

1.5

12

Watt

mW/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RqJA

200

°C/W

Thermal Resistance, Junction to Case

RqJC

83.3

°C/W

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector – Emitter Breakdown Voltage

(IC = 10 mAdc, IB = 0)

BC549B,C

BC550B,C

V(BR)CEO

30

45

—

—

—

—

Vdc

Collector – Base Breakdown Voltage

(IC = 10 µAdc, IE = 0)

BC549B,C

BC550B,C

V(BR)CBO

30

50

—

—

—

—

Vdc

Emitter – Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO

5.0

—

—

Vdc

Collector Cutoff Current

(VCB = 30 V, IE = 0)

(VCB = 30 V, IE = 0, TA = +125°C)

ICBO

—

—

—

—

15

5.0

nAdc

µAdc

Emitter Cutoff Current

(VEB = 4.0 Vdc, IC = 0)

IEBO

—

—

15

nAdc

Order this document

by BC549B/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

BC549B,C

BC550B,C

CASE 29–04, STYLE 17

TO–92 (TO–226AA)

1

2

3

COLLECTOR

1

2

BASE

3

EMITTER