TLC27M4, TLC27M4A, TLC27M4B, TLC27M4Y, TLC27M9

LinCMOS

™ PRECISION QUAD OPERATIONAL AMPLIFIERS

SLOS093C – OCTOBER 1987 – REVISED MAY 1999

2

POST OFFICE BOX 655303

description (continued)

Four offset voltage grades are available (C-suffix and I-suffix types), ranging from the low-cost TLC27M4 (10

mV) to the high-precision TLC27M9 (900

µV). These advantages, in combination with good common-mode

rejection and supply voltage rejection, make these devices a good choice for new state-of-the-art designs as

well as for upgrading existing designs.

In general, many features associated with bipolar technology are available on LinCMOS

™ operational

amplifiers, without the power penalties of bipolar technology. General applications such as transducer

interfacing, analog calculations, amplifier blocks, active filters, and signal buffering are easily designed with the

TLC27M4 and TLC27M9. The devices also exhibit low voltage single-supply operation, and low power

consumption, making them ideally suited for remote and inaccessible battery-powered applications. The

common-mode input voltage range includes the negative rail.

A wide range of packaging options is available, including small-outline and chip-carrier versions for high-density

system applications.

The device inputs and outputs are designed to withstand – 100-mA surge currents without sustaining latch-up.

The TLC27M4 and TLC27M9 incorporate internal ESD-protection circuits that prevent functional failures at

voltages up to 2000 V as tested under MIL-STD-883C, Method 3015; however, care should be exercised in

handling these devices, as exposure to ESD may result in the degradation of the device parametric

performance.

The C-suffix devices are characterized for operation from 0

°C to 70°C. The I-suffix devices are characterized

for operation from – 40

°C to 85°C. The M-suffix devices are characterized for operation over the full military

temperature range of – 55

°C to 125°C.

AVAILABLE OPTIONS

PACKAGE

CHIP

TA

VIOmax

AT 25

°C

SMALL

OUTLINE

(D)

CHIP

CARRIER

(FK)

CERAMIC

DIP

(J)

PLASTIC

DIP

(N)

TSSOP

(PW)

CHIP

FORM

(Y)

900

µV

TLC27M9CD

—

—

TLC27M9CN

—

—

0

°Cto70°C

2 mV

TLC27M4BCD

—

—

TLC27M4BCN

—

—

0

°C to 70°C

5 mV

TLC27M4ACD

—

—

TLC27M4ACN

—

—

10 mV

TLC27M4CD

—

—

TLC27M4CN

TLC27M4CPW

TLC27M4Y

900

µV

TLC27M9ID

—

—

TLC27M9IN

—

—

40

°Cto85°C

2 mV

TLC27M4BID

—

—

TLC27M4BIN

—

—

– 40

°C to 85°C

5 mV

TLC27M4AID

—

—

TLC27M4AIN

—

—

10 mV

TLC27M4ID

—

—

TLC27M4IN

TLC27M41PW

—

55

°Cto125°C

900

µV

TLC27M9MD

TLC27M9MFK

TLC27M9MJ

TLC27M9MN

—

—

– 55

°C to 125°C

10 mV

TLC27M4MD

TLC27M4MFK

TLC27M4MJ

TLC27M4MN

—

—

The D and PW package is available taped and reeled. Add R suffix to the device type (e.g., TLC279CDR).