1

Rectifier Device Data

Designer's™ Data Sheet

Axial Lead Rectifiers

. . . employing the Schottky Barrier principle in a large area metal–to–silicon

power diode. State–of–the–art geometry features chrome barrier metal,

epitaxial construction with oxide passivation and metal overlap contact. Ideally

suited for use as rectifiers in low–voltage, high–frequency inverters, free

wheeling diodes, and polarity protection diodes.

• Extremely Low vF

• Low Power Loss/High Efficiency

• Low Stored Charge, Majority Carrier Conduction

Mechanical Characteristics:

• Case: Epoxy, Molded

• Weight: 1.1 gram (approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are

Readily Solderable

• Lead and Mounting Surface Temperature for Soldering Purposes: 220°C

Max. for 10 Seconds, 1/16

″ from case

• Shipped in plastic bags, 5,000 per bag

• Available Tape and Reeled, 1500 per reel, by adding a “RL’’ suffix to the

part number

• Polarity: Cathode indicated by Polarity Band

• Marking: 1N5820, 1N5821, 1N5822

MAXIMUM RATINGS

Rating

Symbol

1N5820

1N5821

1N5822

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

20

30

40

V

Non–Repetitive Peak Reverse Voltage

VRSM

24

36

48

V

RMS Reverse Voltage

VR(RMS)

14

21

28

V

Average Rectified Forward Current (2)

VR(equiv) v 0.2 VR(dc), TL = 95°C

(R

θJA = 28°C/W, P.C. Board Mounting, see Note 2)

IO

3.0

A

Ambient Temperature

Rated VR(dc), PF(AV) = 0

R

θJA = 28°C/W

TA

90

85

80

°C

Non–Repetitive Peak Surge Current

(Surge applied at rated load conditions, half wave, single phase

60 Hz, TL = 75°C)

IFSM

80 (for one cycle)

A

Operating and Storage Junction Temperature Range

(Reverse Voltage applied)

TJ, Tstg

*65 to +125

°C

Peak Operating Junction Temperature (Forward Current applied)

TJ(pk)

150

°C

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

R

θJA

28

°C/W

(1) Pulse Test: Pulse Width = 300

µs, Duty Cycle = 2.0%.

(2) Lead Temperature reference is cathode lead 1/32

″ from case.

* Indicates JEDEC Registered Data for 1N5820–22.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by 1N5820/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

1N5820

1N5821

1N5822

SCHOTTKY BARRIER

RECTIFIERS

3.0 AMPERES

20, 30, 40 VOLTS

CASE 267–03

PLASTIC

1N5820 and 1N5822 are

Motorola Preferred Devices

Rev 2