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SMG3407 Datasheet(PDF) 3 Page - SeCoS Halbleitertechnologie GmbH |
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SMG3407 Datasheet(HTML) 3 Page - SeCoS Halbleitertechnologie GmbH |
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3 / 4 page  01-Jun-2002 Rev. A Page 3 of 4 Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Elektronische Bauelemente SMG3407 -4.1A, -30V,RDS(ON) 52m P-Channel Enhancement Mode Power Mos.FET Ω 0.000001 0.00001 0.0001 0.001 0.01 0.1 10 1 |
Similar Part No. - SMG3407 |
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Similar Description - SMG3407 |
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