SMG3407 datasheet(2/4 Pages) SECOS

Part #	SMG3407

Description	P-Channel Enhancement Mode Power Mos.FET

Download	4 Pages

Scroll/Zoom	100%

Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

Logo

2 / 4 page

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page

2 of 4

Elektronische Bauelemente

SMG3407

-4.1A, -30V,RDS(ON) 52m

P-Channel Enhancement Mode Power Mos.FET

Ω

Electrical Characteristics (Tj = 25 :::: unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

BVDSS

-30

-

V

VGS=0, ID=-250uA

Gate Threshold Voltage

VGS(th)

-1.0

-

-3.0

V

VDS=VGS, ID=-250uA

Forward Transconductance

gfs

-

8.2

-

S

VDS=-5V, ID=-4A

Gate-Source Leakage Current

IGSS

-

±100

nA

VGS= ±20V

Drain-Source Leakage Current(Tj=25 : )

-

-1

uA

VDS=-30V, VGS=0

Drain-Source Leakage Current(Tj=55 : )

IDSS

-

-5

uA

VDS=-24V, VGS=0

-

52

VGS=-10V, ID=-4.1A

Static Drain-Source On-Resistance

RDS(ON)

-

87

m

VGS=-4.5V, ID=-3.0A

Total Gate Charge2

Qg

-

7

-

Gate-Source Charge

Qgs

-

3.1

-

Gate-Drain (“Miller”) Change

Qgd

-

3

-

nC

ID=-4A

VDS=-15V

VGS=-4.5V

Turn-on Delay Time2

Td(on)

-

8.6

-

Rise Time

Tr

-

5

-

Turn-off Delay Time

Td(off)

-

28.2

-

Fall Time

Tf

-

13.5

-

ns

VDS=-15V

VGS=-10V

RG=3

RL=3.6

Input Capacitance

Ciss

-

700

840

Output Capacitance

Coss

-

120

-

Reverse Transfer Capacitance

Crss

-

75

-

pF

VGS=0V

VDS=-15V

f=1.0MHz

Gate Resistance

Rg

-

10

-

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Forward On Voltage2

VSD

-

-1.0

V

IS=-1.0A, VGS=0V

Reverse Recovery Time2

Trr

-

27

-

ns

Reverse Recovery Charge

Qrr

-

15

-

nC

IS=-4A, VGS=0V

dI/dt=100A/ s

Continuous Source Current (Body Diode)

IS

-

-2.2

A

VD=VG=0V, VS=-1.0V

Notes: 1. Pulse width limited by Max. junction temperature.

2. Pulse width 300us, duty cycle 2%.

3. Surface mounted on 1 in2 copper pad of FR4 board; 270 /W when mounted on Min. copper pad.

:

Similar Part No. - SMG3407

Manufacturer	Part #	Datasheet	Description
SeCoS Halbleitertechnol...	SMG3407	652Kb / 4P	P-Channel Enhancement Mode MOSFET

More results

Similar Description - SMG3407

Manufacturer	Part #	Datasheet	Description
SeCoS Halbleitertechnol...	SSG9575	238Kb / 4P	P-Channel Enhancement Mode Power Mos.FET
	SSD9435	832Kb / 4P	P-Channel Enhancement Mode Power Mos.FET
	SSG4957	429Kb / 4P	P-Channel Enhancement Mode Power Mos.FET
	SSG9563	500Kb / 4P	P-Channel Enhancement Mode Power Mos.FET
	SID3403	781Kb / 4P	P-Channel Enhancement Mode Power Mos.FET
	SSM9563	1Mb / 4P	P-Channel Enhancement Mode Power Mos.FET
	SMS0610	279Kb / 5P	P-Channel Enhancement Mode Power Mos.FET
	SSD9435	832Kb / 4P	P-Channel Enhancement Mode Power Mos.FET
List of Unclassifed Man...	SSG9435	306Kb / 5P	P-Channel Enhancement Mode Power Mos.FET
SeCoS Halbleitertechnol...	SGM2501	420Kb / 4P	P-Channel Enhancement Mode Power Mos.FET
SeCoS Halbleitertechnol...	SSG4953	540Kb / 4P	P-Channel Enhancement Mode Power Mos.FET

More results

SMG3407 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

SMG3407 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

Similar Part No. - SMG3407

Similar Description - SMG3407

Html Pages

1 2 3 4

Datasheet Download

Link URL