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SEF101A Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

Part # SEF101A
Description  1.0AMP High Efficiency Recovery Rectifiers
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SEF101A Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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Any changing of specification will not be informed individual
SEF101A THRU SEF107A
VOLTAGE 50V ~ 1000V
1.0AMP High Efficiency Recovery Rectifiers
0.1
1.0
.01
10
50
CHARACTERISTICS
FORWARD VOLTAGE,(V)
Pulse Width 300us
1% Duty Cycle
0.2
0.4
0.6
0.8
1.0
1.2
35
30
25
20
15
10
5
0
(+)
(+)
25Vdc
(approx.)
( )
( )
.01
.05
.1
.5
1
5
10
50
100
D.U.T.
.6
. 9 1. 2 1. 5 1. 8 2.1 2.4 2. 7
3.0
AMBIENT TEMPERATURE ( C)
Tj=25 C
SEF106A~SEF107A
SEF101A~SEF103A
SE F104A
SE F105A
RATING AND CHARACTERISTIC CURVES (SEF101A THRU SEF107A)
FIG.1-TYPICAL FORWARD
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
FIG.5-TYPICAL JUNCTION CAPACITANCE
REVERSE VOLTAGE,(V)
PULSE
GENERATOR
(NOTE 2)
OSCILLISCOPE
(NOTE 1)
1
NON-
INDUCTIVE
W
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
+0.5A
0
-0.25A
-1.0A
|
|
|
|
|
|
|
|
1cm
SET TIME BASE FOR
50 / 10ns / cm
trr
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
10
NONINDUCTIVE
50
NONINDUCTIVE
W
W
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
10
0
20
30
40
50
NUMBER OF CYCLES AT 60Hz
1
10
5
50
100
Tj=25 C
8.3ms Single Half
Sine Wave
JEDEC method
Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
0
20
40
60
80
100
120
140
160
180
200
0
http://www.SeCoSGmbH.com
Elektronische Bauelemente
01-Jun-2006 Rev. D
Page 2 of 2


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