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2SA733 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SA733 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  Elektronische Bauelemente 2SA733 -60 V, -150 mA PNP Plastic Encapsulated Transistor 01-June-2003 Rev. B Page 1 of 2 RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES Complementary to 2SC945 Collector-Base Voltage: VCBO=-60V PACKAGE DIMENSIONS ABSOLUTE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO -60 V Collector to Emitter Voltage VCEO -50 V Emitter to Base Voltage VEBO -5 V Collector Current -Continuous IC -150 mA Total Power Dissipation Pc 200 mW Junction, Storage Temperature TJ, TSTG +150, -55 ~ +150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions BVCBO -60 - - V IC=-5uA, IE = 0 BVCEO -50 - - V IC=-1mA, IB = 0 BVEBO -5 - - V IE=-50uA, IC = 0 ICBO - - -100 nA VCB=-60V, IE = 0 IEBO - - -100 nA VEB=-5V, IC = 0 VCE(sat) - -0.18 -0.30 V IC=-100mA, IB=-10mA VBE(on) -0.58 -0.62 -0.68 V VCE = -6V, IC = -1.0mA hFE 120 - 475 VCE=-6V, IC=-1mA fT 50 - - MHz VCE=-6V, IC=-10mA Cob - 4.5 7 pF VCB = -10V, IE = 0, f = 1 MHz NF (noise figures) - 6 20 dB VCE=-6V, IC=-0.3mA, Rg=10kΩ, f=100HZ CLASSIFICATION OF hFE Rank L H Range 120 - 220 220 – 475 Marking CS Collector Base Emitter Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm SOT-23 K J C H L A B S G V 3 1 2 D Top View 1 2 3 |
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