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BUW132 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BUW132 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUW132/A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BUW132 450 VCEO(SUS) Collector-Emitter Sustaining Voltage BUW132A IC= 0.1A ; IB= 0; L= 10mH 500 V BUW132 IC= 3A; IB= 0.4A B 2.5 VCE(sat)-1 Collector-Emitter Saturation Voltage BUW132A IC= 3A; IB= 0.6A B 1.0 V BUW132 IC= 5A; IB= 0.66A B 3.0 VCE(sat)-2 Collector-Emitter Saturation Voltage BUW132A IC= 5A; IB= 1A B 1.5 V BUW132 IC= 5A; IB= 0.66A B 1.5 VBE(sat) Base-Emitter Saturation Voltage BUW132A IC= 5A; IB= 1A B 1.5 V ICEV Collector Cutoff Current VCE=VCESMmax;VBE=-1.5V VCE=VCESMmax;VBE=-1.5V;TJ=100℃ 0.25 1.5 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 1 mA hFE DC Current Gain IC= 8A ; VCE= 5V 5 COB Output Capacitance IE= 0 ; VCB= 10V; ftest= 1kHz 350 pF Switching Times , Resistive Load ton Turn-On Time 0.35 μs tstg Storage Time 1.5 μs tf Fall Time IC= 5A ;IB1= 0.66A;IB2= -1.3A 0.1 μs isc Website:www.iscsemi.cn |
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