RENESAS LSIs

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

M5M5256DFP,VP -70G,-70GI,-70XG

PACKAGE

M5M5256DFP

: 28 pin 450 mil SOP

M5M5256DVP

: 28pin

8 X 13.4 mm TSOP

•Single 3.0

•No clocks, no ref resh

•Data-Hold on +2.0V power supply

•Directly TTL compatible : all inputs and outputs

•Three-state outputs : OR-tie capability

•/OE prev ents data contention in the I/O bus

•Common Data I/O

•Battery backup capability

•Low stand-by current .......... 0.05µA(ty p.)

APPLICATION

Small capacity m emory units

DESCRIPTION

The M5M5256DFP,VP is 262,144-bit CMOS static RAMs

organized as 32,768-words by 8-bits which is f abricated using

high-perf ormance 3 poly silicon CMOS technology . The use of

resistiv e load NMOS cells and CMOS periphery results in a high

density and low power static RAM. Stand-by current is small

enough f or battery back-up application. It is ideal f or the memory

sy stems which require simple interf ace.

Especially the M5M5256DVP are packaged in a 28-pin thin small

outline package.

FEATURE

PIN CONFIGURATION (TOP VIEW)

1

20µA

(Vcc= 5.5V)

(Vcc= 5.5V)

40µA

(max)

Stand-by

(max)

Active

(max)

Power supply current

Ty pe

Access

time

45mA

M5M5256DFP,VP

-70G

70ns

M5M5256DFP,VP

-70GI

70ns

24µA

(Vcc= 5.5V)

A14

A12

A6

A5

A4

A3

A2

A1

A0

A7

DQ1

DQ2

DQ3

GND

Vcc

A13

A8

A9

A11

A10

DQ8

DQ7

DQ6

DQ5

DQ4

/W

/OE

/S

28

26

25

24

23

21

18

17

16

15

27

22

20

19

1

2

4

5

6

7

8

9

10

3

11

12

13

14

Outline

28P2C-A (VP)

Outline 28P2W-C (FP)

2

M5M5256DVP

A14

A12

A6

A5

A4

A3

A7

A2

A1

A0

DQ1

DQ2

DQ3

GND

Vcc

A13

A8

A9

A11

/W

/OE

A10

DQ7

DQ6

DQ5

DQ4

/S

DQ8

8

9

10

11

12

13

14

21

18

17

16

15

20

19

1

2

4

5

6

7

3

23

22

24

25

26

27

28

M5M5256DFP,VP

-70XG

70ns

(Vcc= 3.0V Typical)

0.05µA

(Vcc= 5.5V)

5µA

12µA

(Vcc= 3.6V)

(Vcc= 3.6V)

(Vcc= 3.6V)

2.4µA

25mA

(Vcc= 3.6V)

Oprating

Temperature