TCRT5000 datasheet(2/9 Pages) VISHAY

Part #	TCRT5000

Description	Reflective Optical Sensor with Transistor Output

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number 83760

Rev. 1.6, 04-Sep-06

TCRT5000(L)

Vishay Semiconductors

Output (Detector)

Sensor

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Input (Emitter)

Output (Detector)

Parameter

Test condition

Symbol

Value

Unit

Collector emitter voltage

VCEO

70

V

Emitter collector voltage

VECO

5V

Collector current

IC

100

mA

Power dissipation

Tamb ≤ 55 °C

PV

100

mW

Junction temperature

Tj

100

°C

Parameter

Test condition

Symbol

Value

Unit

Total power dissipation

Tamb ≤ 25 °C

Ptot

200

mW

Operation temperature range

Tamb

- 25 to + 85

°C

Storage temperature range

Tstg

- 25 to + 100

°C

Soldering temperature

2 mm from case, t

≤ 10 s

Tsd

260

°C

Figure 1. Power Dissipation Limit vs. Ambient Temperature

0

100

200

300

0

95 11071

Tamb - Ambient Temperature (°C)

IR - diode

Coupled device

Phototransistor

25

50

75

100

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Forward voltage

IF = 60 mA

VF

1.25

1.5

V

Junction capacitance

VR = 0 V, f = 1 MHz

Cj

17

pF

Radiant intensity

IF = 60 mA, tP = 20 ms

IE

21

mW/sr

Peak wavelength

IF = 100 mA

λ

P

940

nm

Virtual source diameter

Method: 63 % encircled energy

Ø

2.1

mm

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Collector emitter voltage

IC = 1 mA

VCEO

70

V

Emitter collector voltage

IE = 100 µA

VECO

7V

Collector dark current

VCE = 20 V, IF = 0, E = 0

ICEO

10

200

nA

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