SI2337DS_08 datasheet(4/7 Pages) VISHAY

Part #	SI2337DS

Description	P-Channel 80-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 73533

S-71597-Rev. C, 30-Jul-07

Vishay Siliconix

Si2337DS

New Product

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

1.0

1.2

0.00

0.2

0.4

0.6

0.8

TJ = 25 °C

TJ = 150 °C

VSD - Source-to-Drain Voltage (V)

0.1

1.0

10.0

20.0

2.0

2.2

2.4

2.6

2.8

3.0

3.2

3.4

3.6

- 50

- 25

0

25

50

75

100

125

150

ID = 250 µA

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.1

0.2

0.3

0.4

0.5

0.6

345

6

7

VGS - Gate-to-Source Voltage (V)

TA = 25 °C

TA = 125 °C

ID = 1.2 A

0

2

4

6

8

10

12

14

16

Time (sec)

0.01

0.1

1

10

100

1000

Safe Operating Area, Junction-to-Ambient

100

1

0.1

1

10

1000

0.001

10

0.1

VDS - Drain-to-Source Voltage (V)

*VGS

minimum VGS at which rDS(on) is specified

0.01

100

TA = 25 °C

Single Pulse

1 ms

10 ms

100 ms

dc

1 s

10 s

*Limited by rDS(on)

>

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