SI2337DS_08 datasheet(3/7 Pages) VISHAY

Part #	SI2337DS

Description	P-Channel 80-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 73533

S-71597-Rev. C, 30-Jul-07

www.vishay.com

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Vishay Siliconix

Si2337DS

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0

1

2

3

4

5

6

7

0.00

1.00

2.00

3.00

4.00

VGS = 10 thru 6 V

VGS = 4 V

VDS - Drain-to-Source Voltage (V)

VGS = 5 V

0.10

0.15

0.20

0.25

0.30

01234567

VGS = 10 V

ID - Drain Current (A)

VGS = 6 V

0

2

4

6

8

10

02468

10

12

ID =1.2 A

Qg - Total Gate Charge (nC)

VDS = 64 V

VDS = 40 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

1

2

3

4

5

6

7

0.0

1.0

2.0

3.0

4.0

5.0

VGS - Gate-to-Source Voltage (V)

TA = 25 °C

TA = - 55 °C

TA = 125 °C

0

100

200

300

400

500

600

700

0

10203040

50607080

Coss

Ciss

VDS - Drain-to-Source Voltage (V)

Crss

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

- 50

- 25

0

25

50

75

100

125

150

VGS = 10 V

TJ - Junction Temperature (°C)

ID = 1.2 A

VGS = 6 V

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