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SI2337DS Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI2337DS Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 7 page  www.vishay.com 2 Document Number: 73533 S-71597-Rev. C, 30-Jul-07 Vishay Siliconix Si2337DS New Product Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 80 V VDS Temperature Coefficient ΔV DS/TJ ID = - 250 µA - 35.8 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ 5.45 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 2 - 4 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 80 V, VGS = 0 V - 1 µA VDS = - 80 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = - 10 V - 7 A Drain-Source On-State Resistancea rDS(on) VGS = - 10 V, ID = - 1.2 A 0.216 0.270 Ω VGS = - 6 V, ID = - 1.1 A 0.242 0.303 Forward Transconductancea gfs VDS = - 15 V, ID = - 1.2 A 4.3 S Dynamicb Input Capacitance Ciss VDS = - 40 V, VGS = 0 V, f = 1 MHz 500 pF Output Capacitance Coss 40 Reverse Transfer Capacitance Crss 25 Total Gate Charge Qg VDS = - 40 V, VGS = - 10 V, ID = - 1.2 A 11 17.0 nC VDS = - 40 V, VGS = - 6 V, ID = - 1.2 A 7 11.0 Gate-Source Charge Qgs 2.1 Gate-Drain Charge Qgd 3.2 Gate Resistance Rg f = 1 MHz 4.8 Ω Turn-On Delay Time td(on) VDD = - 40 V, RL = 42 Ω ID ≅ - 0.96 A, VGEN = - 10 V, Rg = 1 Ω 10 15 ns Rise Time tr 15 23 Turn-Off Delay Time td(off) 20 30 Fall Time tf 15 23 Turn-On Delay Time td(on) VDD = - 40 V, RL = 42 Ω ID ≅ - 0.96 A, VGEN = - 6 V, Rg = 1 Ω 15 23 Rise Time tr 18 27 Turn-Off Delay Time td(off) 20 30 Fall Time tf 12 18 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - 2.1 A Pulse Diode Forward Currenta ISM - 7 Body Diode Voltage VSD IS = 0.63 A - 0.8 - 1.2 V Body Diode Reverse Recovery Time trr IF = 0.63 A, di/dt = 100 A/µs, TJ = 25 °C 30 45 ns Body Diode Reverse Recovery Charge Qrr 45 70 nC Reverse Recovery Fall Time ta 25 ns Reverse Recovery Rise Time tb 5 |
Similar Part No. - SI2337DS_08 |
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Similar Description - SI2337DS_08 |
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