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SI2337DS Datasheet(PDF) 1 Page - Vishay Siliconix |
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SI2337DS Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 7 page Vishay Siliconix Si2337DS Document Number: 73533 S-71597-Rev. C, 30-Jul-07 www.vishay.com 1 New Product P-Channel 80-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) a Qg (Typ) - 80 0.270 at VGS = - 10 V - 2.2 7 0.303 at VGS = - 6 V - 2.1 Ordering Information: Si2337DS-T1-E3 (Lead (Pb)-free) G TO-236 (SOT-23) S D Top View 2 3 1 *Marking Code Si2337DS (E7)* S G D P-Channel MOSFET Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 Board. c. t = 10 sec. d. Maximum under Steady State conditions is 166 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS - 80 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 2.2 A TC = 70 °C - 1.75 TA = 25 °C - 1.2b, c TA = 70 °C - 0.96b, c Pulsed Drain Current IDM - 7 Continuous Source-Drain Diode Current TC = 25 °C IS - 2.1 TA = 25 °C - 0.63b, c Avalanche Current L = 0.1 mH IAS 11 Single-Pulse Avalanche Energy EAS 6.0 mJ Maximum Power Dissipation TC = 25 °C PD 2.5 W TC = 70 °C 1.6 TA = 25 °C 0.76b, c TA = 70 °C 0.48b, c Operating Junction and Storage Temperature Range TJ, Tstg - 50 to 150 °C Soldering Recommendations (Peak Temperature)d, e 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d t ≤ 10 sec RthJA 120 166 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 40 50 RoHS COMPLIANT |
Similar Part No. - SI2337DS_08 |
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Similar Description - SI2337DS_08 |
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