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SI2337DS Datasheet(PDF) 1 Page - Vishay Siliconix

Part # SI2337DS
Description  P-Channel 80-V (D-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI2337DS Datasheet(HTML) 1 Page - Vishay Siliconix

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Vishay Siliconix
Si2337DS
Document Number: 73533
S-71597-Rev. C, 30-Jul-07
www.vishay.com
1
New Product
P-Channel 80-V (D-S) MOSFET
FEATURES
TrenchFET® Power MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
ID (A)
a
Qg (Typ)
- 80
0.270 at VGS = - 10 V
- 2.2
7
0.303 at VGS = - 6 V
- 2.1
Ordering Information: Si2337DS-T1-E3 (Lead (Pb)-free)
G
TO-236
(SOT-23)
S
D
Top View
2
3
1
*Marking Code
Si2337DS (E7)*
S
G
D
P-Channel MOSFET
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 Board.
c. t = 10 sec.
d. Maximum under Steady State conditions is 166 °C/W.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
- 80
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
- 2.2
A
TC = 70 °C
- 1.75
TA = 25 °C
- 1.2b, c
TA = 70 °C
- 0.96b, c
Pulsed Drain Current
IDM
- 7
Continuous Source-Drain Diode Current
TC = 25 °C
IS
- 2.1
TA = 25 °C
- 0.63b, c
Avalanche Current
L = 0.1 mH
IAS
11
Single-Pulse Avalanche Energy
EAS
6.0
mJ
Maximum Power Dissipation
TC = 25 °C
PD
2.5
W
TC = 70 °C
1.6
TA = 25 °C
0.76b, c
TA = 70 °C
0.48b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 50 to 150
°C
Soldering Recommendations (Peak Temperature)d, e
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, d
t
≤ 10 sec
RthJA
120
166
°C/W
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
40
50
RoHS
COMPLIANT


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