SI2337DS_08 datasheet(5/7 Pages) VISHAY

Part #	SI2337DS

Description	P-Channel 80-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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5 / 7 page

Document Number: 73533

S-71597-Rev. C, 30-Jul-07

www.vishay.com

5

Vishay Siliconix

Si2337DS

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

*The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissi-

pation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.

Current Derating*

Single Pulse Avalanche Capability

0.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

0

25

50

75

100

125

150

TC - Case Temperature (°C)

1

10

TA - Time In Avalanche (sec)

T

A

L

I

A

BV

V

DD

1.0E-6

10.0E-6

100.0E-6

1.0E-3

10.0E-3

-

Power Derating

0.0

0.5

1.0

1.5

2.0

2.5

25

50

75

100

125

150

TC - Case Temperature (°C)

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