MCH4013

No. A1268-1/3

www.semiconductor-sanyo.com/network

Ordering number : ENA1268

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are not

guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer

's products or equipment. To verify symptoms and states that cannot be evaluated in an independent

device, the customer should always evaluate and test devices mounted in the customer

's products or

equipment.

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be

intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace

instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety

equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case

of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee

thereof. If you should intend to use our products for applications outside the standard applications of our

customer who is considering such use and/or outside the scope of our intended standard applications, please

consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our

customer shall be solely responsible for the use.

80608AB TI IM TC-00001509

SANYO Semiconductors

DATA SHEET

MCH4013

NPN Epitaxial Planar Silicon Transistor

UHF to X Band Low-Noise Amplifier

and OSC Applications

Features

•

High cut-off frequency : fT=22.5GHz typ (VCE=3V).

•

Low operating voltage.

•

High gain :

⏐S21e⏐

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to- Base Voltage

VCBO

10

V

Collector-to-Emitter Voltage

VCEO

3.5

V

Emitter-to-Base Voltage

VEBO

2.5

V

Collector Current

IC

15

mA

Collector Dissipation

PC

50

mW

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Electrical Characteristics at Ta=25°C

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector Cutoff Current

ICBO

VCB=5V, IE=0A

1.0

μA

Emitter Cutoff Current

IEBO

VEB=1V, IC=0A

1.0

μA

DC Current Gain

hFE

VCE=1V, IC=5mA

70

150

Gain-Bandwidth Product

fT

VCE=3V, IC=10mA

17

22.5

GHz

Reverse Transfer Capacitance

Cre

VCB=1V, f=1MHz

0.06

pF

Forward Transfer Gain

⏐S21e⏐

2

VCE=3V, IC=10mA, f=2GHz

12

16

dB

Noise Figure

NF

VCE=1V, IC=2mA, f=2GHz

1.5

2.0

dB

Marking : GH

Notre) Pay attention to handling since it is liable to be affected by static electricity due to the high-frequency process adopted.