T410-600TTR datasheet(5/8 Pages) STMICROELECTRONICS

Part #	T410-600TTR

Description	4A TRIACS

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T4 Series

5/8

Fig. 6:

Non-repetitive

surge peak on-state

current

for

a

sinusoidal

pulse

with

width

tp < 10ms, and corresponding value of I²t.

Fig.

7:

On-state

characteristics

(maximum

values).

Fig. 8: Relative variation of critical rate of

decrease of main current versus (dV/dt)c (typical

values).

Fig. 9: Relative variation of critical rate of

decrease

of

main

current

versus

junction

temperature.

Fig. 10: DPAK thermal resistance junction to

ambient versus copper surface under tab (printed

circuit board FR4, copper thickness: 35µm).

0.01

0.10

1.00

10.00

1

10

100

500

tp (ms)

ITSM (A), I²t (A²s)

Tj initial=25°C

ITSM

I²t

dI/dt limitation:

50A/µs

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

0.1

1.0

10.0

30.0

ITM(A)

Tj max.:

Vto= 0.90 V

Rd= 120 m

Ω

Tj=Tj max.

VTM(V)

0.1

1.0

10.0

100.0

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c

T435

T410

T405

(dV/dt)c (V/µs)

0

25

50

75

100

125

0

1

2

3

4

5

6

(dI/dt)c [Tj] / (dI/dt)c [Tj specified]

Tj(°C)

0

4

8

1216202428323640

0

10

20

30

40

50

60

70

80

90

100

Rth(j-a) (°C/W)

DPAK

S(cm²)

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