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STP180N55F3 Datasheet(PDF) 4 Page - STMicroelectronics

Part # STP180N55F3
Description  N-channel 55V - 3.2m廓 - 120A - D2PAK/TO-220 STripFET??Power MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP180N55F3 Datasheet(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STB180N55F3 - STP180N55F3
4/14
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250µA, VGS= 0
55
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS= max rating,
VDS= max rating,@125°C
10
100
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20V
±
200
nA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250µA
2
4
V
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 60A
D²PAK
TO-220
2.9
3.2
3.5
3.8
m
m
Table 4.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Forward
transconductance
VDS = 15V , ID = 60A
150
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1MHz,
VGS = 0
6800
1450
15
pF
pF
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 27.5V, ID = 60A
RG =4.7Ω VGS = 10V
(see Figure 12,
Figure 17)
25
150
110
50
ns
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 44V, ID = 120A,
VGS = 10V,
(see Figure 13)
100
30
26
nC
nC
nC


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