2SJ162 datasheet(2/6 Pages) RENESAS

Part #	2SJ162

Description	Silicon P Channel MOS FET

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Manufacturer	RENESAS [Renesas Technology Corp]

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2 / 6 page

2SJ160, 2SJ161, 2SJ162

Rev.2.00 Sep 07, 2005 page 2 of 5

Absolute Maximum Ratings

(Ta = 25

°C)

Item

Symbol

Value

Unit

2SJ160

–120

2SJ161

–140

Drain to source voltage

2SJ162

VDSX

–160

V

Gate to source voltage

VGSS

±15

V

Drain current

ID

–7

A

Body to drain diode reverse drain current

IDR

–7

A

Channel dissipation

Pch

Note 1

100

W

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Note:

1. Value at Tc = 25

°C

Electrical Characteristics

(Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

2SJ160

–120

—

V

2SJ161

–140

—

V

Drain to source breakdown

voltage

2SJ162

V (BR) DSX

–160

—

V

ID = –10 mA, VGS = 10 V

Gate to source breakdown voltage

V (BR) GSS

±15

—

V

IG =

±100 µA, VDS = 0

Gate to source cutoff voltage

VGS (off)

–0.15

—

–1.45

V

ID = –100 mA, VDS = –10 V

Drain to source saturation voltage

VDS (sat)

—

–12

V

ID = –7 A, VGS = 0

Note 2

Forward transfer admittance

|yfs|

0.7

1.0

1.4

S

ID = –3 A, VDS = –10 V

Note 2

Input capacitance

Ciss

—

900

—

pF

Output capacitance

Coss

—

400

—

pF

Reverse transfer capacitance

Crss

—

40

—

pF

VGS = 5 V, VDS = –10 V,

f = 1 MHz

Turn-on time

ton

—

230

—

ns

Turn-off time

toff

—

110

—

ns

VDD = –20 V ID = –4 A

Note:

2. Pulse test

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