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R1LV1616RSA-5SR Datasheet(PDF) 8 Page - Renesas Technology Corp |
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R1LV1616RSA-5SR Datasheet(HTML) 8 Page - Renesas Technology Corp |
8 / 15 page R1LV1616RBA Series REJ03C0340-0001 Rev.0.01 2007.10.31 page 8 of 14 Write Cycle Note0. 55ns parts can be supported under the condition of the input timing limitation toward SRAM on customer’s system. Please contact our sales office in your region, in case of the inquiry for 55ns parts. In case of tAA =70ns, tRC =70ns. 1. tCHZ, tOHZ, tWHZ and tBHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referred to output voltage levels. 2. This parameter is sampled and not 100% tested. 3. AT any given temperature and voltage condition, tHZ max is less than tLZ min both for a given device and form device to device. 4. A write occurs during the overlap of a low CS1#, a high CS2, a low WE# and a low LB# or a low UB#. A write begins at the latest transition among CS1# going low, CS2 going high, WE# going low and LB# going low or UB# going low . A write ends at the earliest transition among CS1# going high, CS2 going low, WE# going high and LB# going high or UB# going high. tWP is measured from the beginning of write to the end of write. 5. tCW is measured from the later of CS1# going low or CS2 going high to end of write. 6. tAS is measured the address valid to the beginning of write. 7. tWR is measured from the earliest of CS1# or WE# going high or CS2 going low to the end of write cycle. Parameter Symbol Vcc=2.7V to 3.6V Unit Notes Min. Max. Write cycle time tWC 55 - ns Address valid to end of write tAW 50 - ns Chip selection to end of write tCW 55 - ns 5 Write pulse width tWP 40 - ns 4 LB#,UB# valid to end of write tBW 50 - ns Address setup time tAS 0 - ns 6 Write recovery time tWR 0 - ns 7 Data to write time overlap tDW 25 - ns Data hold from write time tDH 0 - ns Output active from end of write tOW 5 - ns 2 Output disable to output in high-Z tOHZ 0 20 ns 1,2 Write to output in high-Z tWHZ 0 20 ns 1,2 |
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