2SJ551 datasheet(3/9 Pages) RENESAS

Part #	2SJ551

Description	Silicon P Channel MOS FET

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Manufacturer	RENESAS [Renesas Technology Corp]

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3 / 9 page

2SJ551(L), 2SJ551(S)

Rev.4.00 Sep 07, 2005 page 3 of 8

Main Characteristics

Case Temperature

Tc (°C)

Power vs. Temperature Derating

Drain to Source Voltage

VDS (V)

Typical Output Characteristics

Gate to Source Voltage

VGS (V)

Typical Transfer Characteristics

–20

0

–4

–8

–12

–16

0–2

–4

–6

–8

–10

–20

0

–4

–8

–12

–16

0

–1–2–3–4–5

Tc = 75°C

80

0

20

40

60

0

50

100

150

200

VDS = –10 V

Pulse Test

–10 V

–6 V

–4 V

–3.5 V

–2.5 V

–3 V

VGS = –2 V

Pulse Test

Drain to Source Voltage

VDS (V)

Maximum Safe Operation Area

10

100

30

300

3

0.3

1

0.1

0.3

1

3

10

30

100

1000

Ta = 25°C

PW

= 10

ms

(1

shot)

DC

Operation

(Tc

= 25°C)

1 ms

10

µs

100

µs

Operation in

this area is

limited by RDS (on)

Gate to Source Voltage

VGS (V)

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

–3.0

0

–0.5

–1.0

–1.5

–2.0

–2.5

0

–4

–8

–12

–16

–20

Pulse Test

ID = –20 A

–10 A

–5 A

Drain Current

ID (A)

Static Drain to Source on State Resistance

vs. Drain Current

0.2

0.1

0.02

0.05

0.01

–2

–20

–50

–1

–10

–5

–100

1

0.5

VGS = –4 V

–10 V

Pulse Test

–25°C

25°C

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