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2SJ550 Datasheet(PDF) 2 Page - Renesas Technology Corp |
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2SJ550 Datasheet(HTML) 2 Page - Renesas Technology Corp |
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2 / 9 page  2SJ550(L), 2SJ550(S) Rev.3.00 Sep 07, 2005 page 2 of 8 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Value Unit Drain to source voltage VDSS –60 V Gate to source voltage VGSS ±20 V Drain current ID –15 A Drain peak current ID (pulse) Note 1 –60 A Body to drain diode reverse drain current IDR –15 A Avalanche current IAP Note 3 –15 A Avalanche energy EAR Note 3 19 mJ Channel dissipation Pch Note 2 50 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25 °C 3. Value at Tch = 25 °C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR) DSS –60 — — V ID = –10 mA, VGS = 0 Gate to source breakdown voltage V (BR) GSS ±20 — — V IG = ±100 µA, VDS = 0 Zero gate voltage drain current IDSS — — –10 µA VDS = –60 V, VGS = 0 Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 Gate to source cutoff voltage VGS (off) –1.0 — –2.0 V ID = –1 mA, VDS = –10 V RDS (on) — 0.075 0.095 Ω ID = –8 A, VGS = –10 V Note 4 Static drain to source on state resistance RDS (on) — 0.105 0.155 Ω ID = –8 A, VGS = –4 V Note 4 Forward transfer admittance |yfs| 6.5 11 — S ID = –8 A, VDS = –10 V Note 4 Input capacitance Ciss — 850 — pF Output capacitance Coss — 420 — pF Reverse transfer capacitance Crss — 110 — pF VDS = –10 V VGS = 0 f = 1 MHz Turn-on delay time td (on) — 12 — ns Rise time tr — 75 — ns Turn-off delay time td (off) — 125 — ns Fall time tf — 75 — ns VGS = –10 V ID = –8 A RL = 3.75 Ω Body to drain diode forward voltage VDF — –1.1 — V IF = –15 A, VGS = 0 Body to drain diode reverse recovery time trr — 70 — ns IF = –15 A, VGS = 0 diF/dt = 50 A/ µs Note: 4. Pulse test |
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