© 2007 Fairchild Semiconductor Corporation

www.fairchildsemi.com

2N7002W Rev. A

1

October 2007

2N7002W

N-Channel Enhancement Mode Field Effect Transistor

Features

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra-Small Surface Mount Package

• Lead Free/RoHS Compliant

* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.

Thermal Characteristics

* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimun land pad size,

Symbol

Parameter

Value

Units

Drain-Source Voltage

60

V

60

V

Gate-Source Voltage

Continuous

Pulsed

±20

±40

V

Drain Current

Continuous

Continuous @ 100°C

Pulsed

115

73

800

mA

Junction and Storage Temperature Range

-55 to +150

°C

Symbol

Parameter

Value

Units

Total Device Dissipation

200

1.6

mW

mW/

°C

Thermal Resistance, Junction to Ambient *

625

°C/W

S

D

G

SOT - 323

Marking : 2N