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2N7002W Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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2N7002W Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 6 page ![]() © 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N7002W Rev. A 1 October 2007 2N7002W N-Channel Enhancement Mode Field Effect Transistor Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant Absolute Maximum Ratings * T a = 25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Thermal Characteristics * Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimun land pad size, Symbol Parameter Value Units VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage RGS ≤ 1.0MΩ 60 V VGSS Gate-Source Voltage Continuous Pulsed ±20 ±40 V ID Drain Current Continuous Continuous @ 100°C Pulsed 115 73 800 mA TJ , TSTG Junction and Storage Temperature Range -55 to +150 °C Symbol Parameter Value Units PD Total Device Dissipation Derating above TA = 25°C 200 1.6 mW mW/ °C RθJA Thermal Resistance, Junction to Ambient * 625 °C/W S D G SOT - 323 Marking : 2N |
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