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NE612AN Datasheet(PDF) 2 Page - NXP Semiconductors |
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NE612AN Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 8 page Philips Semiconductors Product specification NE/SA612A Double-balanced mixer and oscillator 1990 Sep 17 2 ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER RATING UNIT VCC Maximum operating voltage 9 V TSTG Storage temperature -65 to +150 °C TA Operating ambient temperature range NE SA 0 to +70 -40 to +85 °C AC/DC ELECTRICAL CHARACTERISTICS TA=25°C, VCC = 6V, Figure 3 SYMBOL PARAMETER TEST CONDITION LIMITS UNIT SYMBOL PARAMETER TEST CONDITION Min Typ Max UNIT VCC Power supply voltage range 4.5 8.0 V DC current drain 2.4 3.0 mA fIN Input signal frequency 500 MHz fOSC Oscillator frequency 200 MHz Noise figured at 45MHz 5.0 dB Third-order intercept point at 45MHz RFIN=-45dBm -13 dBm Conversion gain at 45MHz 14 17 dB RIN RF input resistance 1.5 k Ω CIN RF input capacitance 3 pF Mixer output resistance (Pin 4 or 5) 1.5 k Ω DESCRIPTION OF OPERATION The NE/SA612A is a Gilbert cell, an oscillator/buffer, and a temperature compensated bias network as shown in the equivalent circuit. The Gilbert cell is a differential amplifier (Pins 1 and 2) which drives a balanced switching cell. The differential input stage provides gain and determines the noise figure and signal handling performance of the system. The NE/SA612A is designed for optimum low power performance. When used with the NE614A as a 45MHz cordless phone/cellular radio 2nd IF and demodulator, the NE/SA612A is capable of receiving -119dBm signals with a 12dB S/N ratio. Third-order intercept is typically -15dBm (that’s approximately +5dBm output intercept because of the RF gain). The system designer must be cognizant of this large signal limitation. When designing LANs or other closed systems where transmission levels are high, and small-signal or signal-to-noise issues not critical, the input to the NE/SA612A should be appropriately scaled. |
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