STN3NE06L datasheet(3/5 Pages) STMICROELECTRONICS

Part #	STN3NE06L

Description	N - CHANNEL 60V - 0.10 ohm - 3A - SOT-223 STripFETO POWER MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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3 / 5 page

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

tr

Turn-on Time

Rise Time

VDD = 30 V

ID = 6 A

RG = 4.7

Ω

VGS = 5 V

17

35

23

50

ns

(di/dt)on

Turn-on Current Slope

VDD = 25 V

ID = 6 A

RG = 4.7

Ω

VGS = 10 V

200

A/

µs

Qg

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD = 40 V

ID = 12 A

VGS = 5 V

13

6

5

18

nC

SWITCHING OFF

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

tr(Voff)

tf

tc

Off-voltage Rise Time

Fall Time

Cross-over Time

VDD = 48 V

ID = 12 A

RG = 4.7

Ω

VGS =5 V

9

18

30

12

25

45

ns

SOURCE DRAIN DIODE

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

ISDM(

•)

Source-drain Current

(pulsed)

3

12

A

VSD (

∗)

Forward On Voltage

ISD = 3 A

VGS = 0

1.5

V

trr

Qrr

IRRM

Reverse Recovery

Time

Reverse Recovery

Charge

Reverse Recovery

Current

ISD = 12 A

di/dt = 100 A/

µs

VDD = 25 V

Tj = 150

oC

65

0.13

4

ns

µC

A

(

∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

(

•) Pulse width limited by safe operating area

STN3NE06L

3/5

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