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STN3NE06L Datasheet(PDF) 2 Page - STMicroelectronics

Part # STN3NE06L
Description  N - CHANNEL 60V - 0.10 ohm - 3A - SOT-223 STripFETO POWER MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STN3NE06L Datasheet(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
Rthj-pcb
Rthj-amb
Tl
Thermal Resistance Junction-PC Board
Max
Thermal Resistance Junction-ambient
Max
(Surface Mounted)
Maximum Lead Temperature For Soldering Purpose
50
60
260
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
3A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25
oC, ID = IAR, VDD = 25 V)
20
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250
µA
VGS = 0
60
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating
Tc = 125
oC
1
10
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS =
± 20 V
± 100
nA
ON (
∗)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold
Voltage
VDS = VGS
ID = 250
µA
1
1.7
2.5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10 V
ID = 6A
VGS = 5 V
ID = 6A
0.080
0.1
0.100
0.12
Ω
Ω
ID(on)
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
3A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (
∗)
Forward
Transconductance
VDS > ID(on) x RDS(on)max
ID = 1.5 A
1
3
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V
f = 1 MHz
VGS = 0 V
700
100
30
960
140
45
pF
pF
pF
STN3NE06L
2/5


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