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STN3NE06L Datasheet(PDF) 1 Page - STMicroelectronics |
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STN3NE06L Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 5 page  STN3NE06L N - CHANNEL 60V - 0.10 Ω - 3A - SOT-223 STripFET ™ POWER MOSFET PRELIMINARY DATA s TYPICAL RDS(on) = 0.10 Ω s EXCEPTIONAL dv/dt CAPABILITY s AVALANCHE RUGGED TECHNOLOGY s 100 % AVALANCHE TESTED s APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size ™ " stip-based process. The resulting transis- tor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a re- markable manufacturing reproducibility. APPLICATIONS s DC MOTOR CONTROL (DISK DRIVES,etc.) s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION ® INTERNAL SCHEMATIC DIAGRAM TYPE VDSS RDS(on) ID STN3NE06L 60 V < 0.120 Ω 3 A August 1998 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 60 V VDGR Drain- gate Voltage (RGS = 20 k Ω) 60 V VGS Gate-source Voltage ± 20 V ID Drain Current (continuous) at Tc = 25 oC3 A ID Drain Current (continuous) at Tc = 100 oC1.8 A IDM( •) Drain Current (pulsed) 12 A Ptot Total Dissipation at Tc = 25 oC2.5 W Derating Factor 0.02 W/ oC dv/dt(1) Peak Diode Recovery voltage slope 6 V/ns Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC ( •) Pulse width limited by safe operating area (1) ISD ≤ 12 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX New RDS (on) spec. starting from JULY 98 1 2 2 3 SOT-223 1/5 |
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