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T410-600T-TR Datasheet(PDF) 2 Page - STMicroelectronics |
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T410-600T-TR Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 10 page  T4 Series 2/10 Table 3: Absolute Maximum Ratings Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified) Symbol Parameter Value Unit IT(RMS) RMS on-state current (full sine wave) IPAK/DPAK/ TO-220AB Tc = 110°C 4A ISOWATT220AB Tc = 105°C ITSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) F = 50 Hz t = 20 ms 30 A F = 60 Hz t = 16.7 ms 31 I²tI²t Value for fusing tp = 10 ms 5.1 A²s dI/dt Critical rate of rise of on-state cur- rent IG = 2 x IGT , tr ≤ 100 ns F = 120 Hz Tj = 125°C 50 A/µs IGM Peak gate current tp = 20 µs Tj = 125°C 4A PG(AV) Average gate power dissipation Tj = 125°C 1W Tstg Tj Storage junction temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 °C Symbol Test Conditions Quadrant T4 Unit T405 T410 T435 IGT (1) VD = 12 V RL = 30 Ω I - II - III MAX. 5 10 35 mA VGT I - II - III MAX. 1.3 V VGD VD = VDRM RL = 3.3 kΩ Tj = 125°C I - II - III MIN. 0.2 V IH (2) IT = 100 mA MAX. 10 15 35 mA IL IG = 1.2 IGT I - III MAX. 10 25 50 mA II 15 30 60 dV/dt (2) VD = 67 %VDRM gate open Tj = 125°C MIN. 20 40 400 V/µs (dI/dt)c (2) (dV/dt)c = 0.1 V/µs Tj = 125°C MIN. 1.8 2.7 - A/ms (dV/dt)c = 10 V/µs Tj = 125°C 0.9 2.0 - Without snubber Tj = 125°C -- 2.5 Note 1: minimum IGT is guaranted at 5% of IGT max. Note 2: for both polarities of A2 referenced to A1. |
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