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EMP216MEAF Datasheet(PDF) 5 Page - Emerging Memory & Logic Solutions Inc |
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EMP216MEAF Datasheet(HTML) 5 Page - Emerging Memory & Logic Solutions Inc |
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5 / 15 page  EMP216MEAF Series 2Mx16 Pseudo Static RAM Preliminary Rev 0.0 DC AND OPERATING CHARACTERISTICS 1. Maximum Icc specifications are tested with VCC = VCCmax. Parameter Symbol Test Conditions Min Typ Max Unit Input leakage current ILI VIN=VSS to VCCQ , VCC=VCCmax -1 - 1 uA Output leakage current ILO CS#=VIH , ZZ#=VIH , OE#=VIH or WE#=VIL , VIO=VSS to VCCQ , VCC=VCCmax -1 - 1 uA Average operating current ICC1 Cycle time=1 µs, 100% duty, IIO=0mA, CS#<0.2V, ZZ#=VIH , VIN<0.2V or VIN>VCCQ-0.2V - - 3 mA ICC2 Cycle time = Min, IIO=0mA, 100% duty, CS#=VIL, ZZ#=VIH, VIN=VIL or VIH - - 25 mA Output low voltage VOL IOL = 0.5mA, VCC=VCCmin - - 0.2*VCCQ V Output high voltage VOH IOH = -0.5mA, VCC=VCCmin 0.8*VCCQ - - V Standby Current (CMOS) ISB CS#,ZZ#>VCCQ-0.2V, Other inputs = 0 ~ VCCQ (Typ. condition : VCC=3.0V @ 25oC) (Max. condition : VCC=3.3V @ 85oC) - - 100 uA RECOMMENDED DC OPERATING CONDITIONS 1) 1. TA= -25 to 85oC, otherwise specified 2. Overshoot: VCC +1.0 V in case of pulse width < 20ns 3. Undershoot: -1.0 V in case of pulse width < 20ns 4. Overshoot and undershoot are sampled, not 100% tested . Parameter Symbol Min Typ Max Unit Supply voltage VCC 2.7 3.0 3.3 V VCCQ 2.7 3.0 3.3 V Ground VSS, VSSQ 0 0 0 V Input high voltage VIH 0.8 * VCCQ - VCCQ + 0.22) V Input low voltage VIL -0.23) - 0.2 * VCCQ V CAPACITANCE1) (f =1MHz, TA=25oC) 1. Capacitance is sampled, not 100% tested Item Symbol Test Condition Min Max Unit Input capacitance CIN VIN=0V - 8 pF Input/Ouput capacitance CIO VIO=0V - 8 pF |
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