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EMP216MEAW Datasheet(PDF) 10 Page - Emerging Memory & Logic Solutions Inc |
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EMP216MEAW Datasheet(HTML) 10 Page - Emerging Memory & Logic Solutions Inc |
10 / 14 page EMP216MEAW Series 2Mx16 Pseudo Static RAM Preliminary Rev 0.0 NOTES (WRITE CYCLE) 1. A write occurs during the overlap(tWP) of low CS#, low WE# and low UB# or LB#. A write begins at the last transition among low CS# and low WE# with asserting UB# or LB# low for single byte operation or simultaneously asserting UB# and LB# low for word operation. A write ends at the earliest transition among high CS# and high WE#. The tWP is measured from the beginning of write to the end of write. 2. tCW is measured from CS# going low to end of write. 3. tAS is measured from the address valid to the beginning of write. 4. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CS# or WE# going high. 5. Do not Access device with cycle timing shorter than tWC for continuous periods > 20us. PAGE WRITE CYCLE (ZZ#=VIH, 16 Words access) tMRC Address tWC High-Z Data Valid Data Valid Data Valid Data Valid Data Valid (A20~A4) Address (A3~A0) tPC tPC tPC tPC CS# LB#,UB# WE# Data In Data Out tOW tWHZ tAS tDW tDH tDW tDH tDW tDH tDW tDH tDW tDH |
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