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EMP216MGAW Datasheet(PDF) 5 Page - Emerging Memory & Logic Solutions Inc

Part # EMP216MGAW
Description  2Mx16 Pseudo Static RAM
Download  12 Pages
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Manufacturer  EMLSI [Emerging Memory & Logic Solutions Inc]
Direct Link  http://www.emlsi.com
Logo EMLSI - Emerging Memory & Logic Solutions Inc

EMP216MGAW Datasheet(HTML) 5 Page - Emerging Memory & Logic Solutions Inc

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EMP216MGAW Series
2Mx16 Pseudo Static RAM
Preliminary
Rev 0.0
DC AND OPERATING CHARACTERISTICS
1. Maximum Icc specifications are tested with VCC = VCCmax.
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Input leakage current
ILI
VIN=VSS to VCCQ , VCC=VCCmax
-1
-
1
uA
Output leakage current
ILO
CS#=VIH , ZZ#=VIH , OE#=VIH or WE#=VIL ,
VIO=VSS to VCCQ , VCC=VCCmax
-1
-
1
uA
Average operating current
ICC1
Cycle time=1
µs, 100% duty, IIO=0mA,
CS#<0.2V, ZZ#=VIH , VIN<0.2V or VIN>VCCQ-0.2V
-
-
3
mA
ICC2
Cycle time = Min, IIO=0mA, 100% duty,
CS#=VIL, ZZ#=VIH, VIN=VIL or VIH
-
-
25
mA
Output low voltage
VOL
IOL = 0.5mA, VCC=VCCmin
-
-
0.2*VCCQ
V
Output high voltage
VOH
IOH = -0.5mA, VCC=VCCmin
0.8*VCCQ
-
-
V
Standby Current (CMOS)
ISB
CS#,ZZ#>VCCQ-0.2V, Other inputs = 0 ~ VCCQ
(Typ. condition : VCC=3.0V @ 25oC)
(Max. condition : VCC=3.3V @ 85oC)
-
-
100
uA
RECOMMENDED DC OPERATING CONDITIONS 1)
1. TA= -25 to 85oC, otherwise specified
2. Overshoot: VCC +1.0 V in case of pulse width < 20ns
3. Undershoot: -1.0 V in case of pulse width < 20ns
4. Overshoot and undershoot are sampled, not 100% tested
.
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
VCC
2.7
3.0
3.3
V
VCCQ
2.7
3.0
3.3
V
Ground
VSS, VSSQ
0
0
0
V
Input high voltage
VIH
0.8 * VCCQ
-
VCCQ + 0.22)
V
Input low voltage
VIL
-0.23)
-
0.2 * VCCQ
V
CAPACITANCE1) (f =1MHz, TA=25oC)
1. Capacitance is sampled, not 100% tested
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
CIN
VIN=0V
-
8
pF
Input/Ouput capacitance
CIO
VIO=0V
-
8
pF


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