EMP216MGAW Series

2Mx16 Pseudo Static RAM

Preliminary

Rev 0.0

2Mb x16 Pseudo Static RAM Specification

GENERAL DESCRIPTION

The EMP216MGAW series is 33,554,432 bits of Pseudo SRAM which uses DRAM type memory cells, but

this device has refresh-free operation and extreme low power consumption technology. Furthermore the

interface is compatible to a low power Asynchronous type SRAM. The EMP216MGAW is organized as

2,097,152 Words x 16 bit.

FEATURES

- Organization :2M x16

- Power Supply Voltage : 2.7 ~ 3.3V

- Separated I/O power(VccQ) & Core power(Vcc)

- Three state outputs

- Byte read/write control by UB# / LB#

- Support Page Read/Write operation with 16 words

- Support Direct Deep Power Down control by ZZ# and Auto-TCSR for power saving

PRODUCT FAMILY

Part Number

Operating Temp.

Power Supply

Speed

Power Dissipation

Standby

Operating

EMP216MGAW-70E

2.7V to 3.3V

70ns

100uA

25mA

FUNCTION BLOCK DIAGRAM

COLUMN SELECT

I/O CIRCUIT

Memory Array

2M X 16

Self-Refresh

CONTROL

CONTROL

LOGIC

ADDRESS

DECODER

Din/Dout BUFFER

DQ0~

DQ15

A0~A20

ZZ#

CS#

UB#

LB#

WE#

OE#