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EMP216MGAW Datasheet(PDF) 8 Page - Emerging Memory & Logic Solutions Inc |
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EMP216MGAW Datasheet(HTML) 8 Page - Emerging Memory & Logic Solutions Inc |
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8 / 12 page  EMP216MGAW Series 2Mx16 Pseudo Static RAM Preliminary Rev 0.0 PAGE READ CYCLE (ZZ#=WE#=VIH, 16 Words access) tMRC Address tRC High-Z Data Valid Data Valid Data Valid Data Valid Data Valid (A20~A4) Address (A3~A0) tPC tPC tPC tPC CS# LB#,UB# OE# Data Out tAA tCO tBA tOE tOLZ tBLZ tLZ tPAA tPAA tPAA tPAA tOHZ tBHZ tHZ tOH NOTES (READ CYCLE) 1. tHZ , tBHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels. 2. Do not Access device with cycle timing shorter than tRC for continuous periods > 20us. |
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