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EMP216MGAW Datasheet(PDF) 7 Page - Emerging Memory & Logic Solutions Inc |
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EMP216MGAW Datasheet(HTML) 7 Page - Emerging Memory & Logic Solutions Inc |
7 / 12 page EMP216MGAW Series 2Mx16 Pseudo Static RAM Preliminary Rev 0.0 TIMING DIAGRAMS Address CS# LB#, UB# OE# Data Out tCO tOH tBA tOE tBHZ tOHZ Data Vaild tOLZ tBLZ tLZ tAA tHZ READ CYCLE (2) (ZZ#=WE#=VIH) NOTES (READ CYCLE) 1. tHZ , tBHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels. 2. Do not Access device with cycle timing shorter than tRC for continuous periods > 20us. READ CYCLE (1) (Address controlled, CS#=OE#=VIL, ZZ#=WE#=VIH, UB# or/and LB#=VIL) tRC Address tAA Data Out Data Valid tOH Previous Data Valid High-Z tRC |
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