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BT136-D Datasheet(PDF) 2 Page - SemiWell Semiconductor |
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BT136-D Datasheet(HTML) 2 Page - SemiWell Semiconductor |
2 / 5 page Electrical Characteristics Symbol Items Conditions Ratings Unit Min. Typ. Max. IDRM Repetitive Peak Off-State Current VD = VDRM, Single Phase, Half Wave TJ = 125 °C ── 0.5 mA VTM Peak On-State Voltage IT = 5 A, Inst. Measurement ── 1.7 V I+GT1 Ⅰ Gate Trigger Current VD = 6 V, RL=10 Ω ── 5 mA I -GT1 Ⅱ ── 5 I -GT3 Ⅲ ── 5 I+GT3 Ⅳ ── 12 V+GT1 Ⅰ Gate Trigger Voltage VD = 6 V, RL=10 Ω ── 1.5 V V-GT1 Ⅱ ── 1.5 V-GT3 Ⅲ ── 1.5 V+GT3 Ⅳ ── 2.5 VGD Non-Trigger Gate Voltage TJ = 125 °C, VD = 1/2 VDRM 0.2 ── V (dv/dt)c Critical Rate of Rise Off-State Voltage at Commutation TJ = 125 °C, [di/dt]c = -0.75 A/ms, VD=2/3 VDRM 5.0 ── V/㎲ IH Holding Current ─ 5 ─ mA Rth(j-c) Thermal Impedance Junction to case ── 3.0 °C/W BT136-D 2/5 |
Similar Part No. - BT136-D |
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Similar Description - BT136-D |
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