SUBMINIATURE

PHOTOINTERRUPTER

MIR-3301-P

Description

Package Dimensions

The MIR-3301-P consists of a Gallium Arsenide in-

frared emitting diode and a NPN silicon phototran-

sistor built in a black plastic housing. It is a refl-

ective subminiature photointerrupter.

Features

Compact and thin

MIR-3301 : long lead type

Optimum detecting diatance : 0.8 - 1.0 mm

Wavelength : 940nm

Visible light cut-off type

Flat lead type

Absolute Maximum Ratings

Parameter

Symbol

Minimum Rating Maximum Rating

Unit

Continuous Forward Current

50

mA

INPUT

Reverse Voltage

5V

Power Dissipation

75

mW

30

V

OUTPUT

5V

Collector power dissipation

75

mW

Total power dissipation

100

mW

Operating Temperature Range

Storage Temperature Range

12/12/2001

Lead Soldering Temperature (within 5 sec, minimum 1.6mm from body) at 260

Collector-emitter breakdown voltage

Emitter-Collector breakdown voltage

Unity Opto Technology Co., Ltd.

Unit: mm

D

C

A

B

Emitte r

Anode

Colle ctor

Cathode

TOP VIEW

NOTE :

(1).Tolerance:±0.2mm

(2). ( ) Reference dimensions