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EDS1216AGTA Datasheet(PDF) 1 Page - Elpida Memory |
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EDS1216AGTA Datasheet(HTML) 1 Page - Elpida Memory |
1 / 49 page Document No. E0847E20 (Ver. 2.0) Date Published February 2006 (K) Japan Printed in Japan URL: http://www.elpida.com Elpida Memory, Inc. 2005-2006 PRELIMINARY DATA SHEET 128M bits SDRAM EDS1216AGTA (8M words × 16 bits) Specifications • Density: 128M bits • Organization 2M words × 16 bits × 4 banks • Package: 54-pin plastic TSOP (II) Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 3.3V ± 0.3V • Clock frequency: 166MHz/133MHz (max.) • Four internal banks for concurrent operation • Interface: LVTTL • Burst lengths (BL): 1, 2, 4, 8, full page • Burst type (BT): Sequential (1, 2, 4, 8, full page) Interleave (1, 2, 4, 8) • /CAS Latency (CL): 2, 3 • Precharge: auto precharge option for each burst access • Refresh: auto-refresh, self-refresh • Refresh cycles: 4096 cycles/64ms Average refresh period: 15.6µs • Operating ambient temperature range TA = 0°C to +70°C Features • Single pulsed /RAS • Burst read/write operation and burst read/single write operation capability • Byte control by UDQM and LDQM Pin Configurations /xxx indicates active low signal. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 VSS DQ15 VSSQ DQ14 DQ13 VDDQ DQ12 DQ11 VSSQ DQ10 DQ9 VDDQ DQ8 VSS NC UDQM CLK CKE NC A11 A9 A8 A7 A6 A5 A4 VSS VDD DQ0 VDDQ DQ1 DQ2 VSSQ DQ3 DQ4 VDDQ DQ5 DQ6 VSSQ DQ7 VDD LDQM /WE /CAS /RAS /CS BA0 BA1 A10 A0 A1 A2 A3 VDD 54-pin Plastic TSOP (II) (Top view) Address input Bank select address Data-input/output Chip select Row address strobe Column address strobe Write enable A0 to A11 BA0, BA1 DQ0 to DQ15 /CS /RAS /CAS /WE Input/output mask Clock enable Clock input Power for internal circuit Ground for internal circuit Power for DQ circuit Ground for DQ circuit No connection LDQM, UDQM CKE CLK VDD VSS VDDQ VSSQ NC |
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