STP5NK52ZD datasheet(3/17 Pages) STMICROELECTRONICS

Part #	STP5NK52ZD

Description	N-channel 520V - 1.22廓 - 4.4A - TO-220 - DPAK - I2PAK - IPAK Zener-protected SuperMESH??Power MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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STB5NK52ZD-1 - STD5NK52ZD-1 - STD5NK52ZD - STP5NK52ZD

Electrical ratings

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1

Electrical ratings

Table 1.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

520

V

VDGR

Drain-gate voltage (RGS = 20 kΩ)520

V

VGS

Gate- source voltage

± 30

V

ID

Drain current (continuous) at TC = 25°C

4.4

A

ID

Drain current (continuous) at TC = 100°C

2.7

A

IDM

(1)

1.

Pulse width limited by safe operating area

Drain current (pulsed)

17.6

A

PTOT

Total dissipation at TC = 25°C

70

W

Derating factor

0.56

W/°C

VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ)

2800

V

dv/dt (2)

2.

ISD <4.4A, di/dt <200A/µs, VDD =80% V(BR)DSS

Peak diode recovery voltage slope

15

V/ns

Tj

Tstg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 2.

Thermal data

TO-220/I²PAK

DPAK/IPAK

Rthj-case Thermal resistance junction-case Max

1.78

°C/W

Rthj-amb Thermal resistance junction-ambient Max

62.5

100

°C/W

Tl

Maximum lead temperature for soldering purpose

300

°C

Table 3.

Avalanche Characteristics

Symbol

Parameter

Max value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max)

4.4

A

EAS

Single pulse avalanche energy

(starting Tj = 25°C, ID = IAR, VDD = 50V)

170

mJ

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