MJE350 datasheet(2/5 Pages) STMICROELECTRONICS

Part #	MJE350

Description	COMPLEMETARY SILICON POWER TRANSISTORS

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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THERMAL DATA

Rthj-ca se

Thermal Resist ance Junction-case

Max

6.0

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ICBO

Collect or Cut-off

Current (IE =0)

VCB =300 V

100

µA

IEBO

Emitt er Cut-off Current

(IC =0)

VEB =3 V

100

µA

VCEO(sus )

∗ Collector-Emitter

Sustaining Voltage

(IB =0)

IC = 1 mA

300

V

hFE

DC Current G ain

IC =50 mA

VCE =10 V

30

240

∗ Pulsed: Pulse duration = 300µs, duty cycle ≤ 2%

Safe Operating Area

Derating Curve

MJE340 / MJE350

2/5

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