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M58CR064C Datasheet(PDF) 30 Page - STMicroelectronics

Part # M58CR064C
Description  64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory
PDF  70 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M58CR064C Datasheet(HTML) 30 Page - STMicroelectronics

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M58CR064C, M58CR064D, M58CR064P, M58CR064Q
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PROGRAM AND ERASE TIMES AND ENDURANCE CYCLES
The Program and Erase times and the number of
Program/ Erase cycles per block are shown in Ta-
ble 14. In the M58CR064 the maximum number of
Program/ Erase cycles depends on the voltage
supply used.
Table 14. Program, Erase Times and Program, Erase Endurance Cycles
Note: 1. TA = –40 to 85°C; VDD = 1.65V to 2V; VDDQ = 1.65V to 3.3V.
2. The difference between Preprogrammed and not preprogrammed is not significant (‹30ms).
3. Excludes the time needed to execute the command sequence.
Parameter
Condition
Min
Typ
Typical
after
100k W/E
Cycles
Max
Unit
Parameter Block (4 KWord) Erase(2)
0.3
1
2.5
s
Main Block (32 KWord) Erase
Preprogrammed
0.8
3
4
s
Not Preprogrammed
1.1
4
s
Bank A (16Mbit) Erase
Preprogrammed
11
s
Not Preprogrammed
18
s
Bank B (48Mbit) Erase
Preprogrammed
33
s
Not Preprogrammed
54
s
Parameter Block (4 KWord) Program(3)
40
ms
Main Block (32 KWord) Program(3)
300
ms
Word Program (3)
10
10
100
µs
Program Suspend Latency
5
10
µs
Erase Suspend Latency
5
20
µs
Program/Erase Cycles (per Block)
Main Blocks
100,000
cycles
Parameter Blocks
100,000
cycles
Parameter Block (4 KWord) Erase
0.3
2.5
s
Main Block (32 KWord) Erase
0.9
4
s
Bank A (16Mbit) Erase
13
s
Bank B (48Mbit) Erase
39
s
4Mbit Program
Quadruple Word
510
ms
Word/ Double Word/ Quadruple Word Program(3)
8
100
µs
Parameter Block (4 KWord)
Program(3)
Quadruple Word
8
ms
Word
32
ms
Main Block (32 KWord) Program(3)
Quadruple Word
64
ms
Word
256
ms
Program/Erase Cycles (per Block)
Main Blocks
1000
cycles
Parameter Blocks
2500
cycles


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