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M58CR064C Datasheet(PDF) 69 Page - STMicroelectronics |
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M58CR064C Datasheet(HTML) 69 Page - STMicroelectronics |
69 / 70 page ![]() 69/70 M58CR064C, M58CR064D, M58CR064P, M58CR064Q 24-Feb-2003 9.2 Revision History moved to end of document. 90ns Speed Class added. Bank Erase Command moved to Factory Program Commands section. Bank Erase cycles limited to 100 per Block. WAIT signal modified in Figure 7, Wait Configuration Example. WAIT behavior modified. Burst sequence in wrapped configuration and Burst sequence start specified in Synchronous Burst Read Mode paragraph. Erase replaced by Block Erase in Tables 11 and 12, Dual Operations allowed in Other Bank and in Same Bank, respectively. Latch signal corrected in Figure 11, Asynchronous Page Read AC Waveforms. Daisy Chain added. 06-Jun-2003 9.3 VDD and VDDQ minimum values changed for 90ns speed class in Table 16, Operating and AC Measurement Conditions. Minor text changes. Date Version Revision Details |
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