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SID300S12 Datasheet(PDF) 2 Page - Sirectifier Semiconductors |
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SID300S12 Datasheet(HTML) 2 Page - Sirectifier Semiconductors |
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2 / 2 page  SID300S12 SPT IGBT Modules Characteristics Symbol Conditions min. typ. max. Units IGBT VGE(th) VGE = VCE, IC =8mA 4.5 5.5 6.5 V ICES VGE = 0; VCE = VCES; Tj = 25(125) oC 0.2 0.6 mA VCE(TO) Tj = 25 oC 1(0.9) 1.15(1.05) V rCE VGE = 15V, Tj = 25(125) oC 4.5(6) 6(7.5) m VCE(sat) IC =200A; VGE = 15V; chip level 1.9(2.1) 2.35(2.55) V Cies under following conditions 17 Coes VGE = 0, VCE = 25V, f = 1MHz 2 Cres 1.9 LCE 20 nH RCC'+EE' res., terminal-chip TC = 25(125) oC 0.35(0.5) m under following conditions: td(on) VCC = 600V, IC = 200A 170 ns tr RGon = RGoff = 5 , Tj = 125 oC 55 ns td(off) VGE = ± 15V 660 ns tf 60 ns Eon(Eoff) 22(22) mJ Inverse Diode under following conditions: VF = VEC IF =200A; VGE = 0V; Tj = 25(125) oC 2(1.8) 2.5 V V(TO) Tj = 25(125) oC 1.2 V rT Tj = 25(125) oC 4.5 6.5 m IRRM IF = 200A; Tj = 125 oC 280 A Qrr di/dt = 6300A/us uC Err VGE = V mJ FWD under following conditions: VF = VEC IF = 100A; VGE = 0V; Tj = 25(125) oC 2.1(1.8) 2.5 V V(TO) Tj = 25(125) oC 1.2 V rT Tj = 25(125) oC 4.5 6.5 m IRRM IF = 200A; Tj = 25(125) oC 280 A Qrr di/dt = A/us uC Err VGE = V mJ Thermal Characteristics Rth(j-c) per IGBT 0.085 K/W Rth(j-c)D per Inverse Diode 0.18 K/W Rth(c-s) per module 0.038 K/W Mechanical Data Ms to heatsink M6 3 5 Nm Mt to terminals M6 2.5 5 Nm w 325 g TC = 25 oC, unless otherwise specified nF 33 33 1.1 11 1.1 11 |
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