M29W800AT datasheet(19/33 Pages) STMICROELECTRONICS

Part #	M29W800AT

Description	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory

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M29W800AT, M29W800AB

Figure 8. Write AC Waveforms, W Controlled

Note: Address are latched on the falling edge of W, Data is latched on the rising edge of W.

AI02183

E

G

W

A0-A18/

A–1

DQ0-DQ7/

DQ8-DQ15

VALID

VCC

tVCHEL

tWHEH

tWHWL

tELWL

tAVWL

tWHGL

tWLAX

tWHDX

tAVAV

tDVWH

tWLWH

tGHWL

RB

tWHRL

Erase Suspend (ES) Instruction. The

Block

Erase operation may be suspended by this in-

struction which consists of writing the command

B0h without any specific address. No Coded cy-

cles are required. It permits reading of data from

another block and programming in another block

while an erase operation is in progress. Erase sus-

pend is accepted only during the Block Erase in-

struction execution. Writing this command during

Erase timeout will, in addition to suspending the

erase, terminate the timeout. The Toggle bit DQ6

stops toggling when the P/E.C. is suspended. The

Toggle bits will stop toggling between 0.1

µs and

15

µs after the Erase Suspend (ES) command has

been written. The device will then automatically be

set to Read Memory Array mode. When erase is

suspended, a Read from blocks being erased will

output DQ2 toggling and DQ6 at ’1’. A Read from

a block not being erased returns valid data. During

suspension the memory will respond only to the

Erase Resume ER and the Program PG instruc-

tions. A Program operation can be initiated during

erase suspend in one of the blocks not being

erased. It will result in both DQ2 and DQ6 toggling

when the data is being programmed. A Read/Re-

set command will definitively abort erasure and re-

sult in invalid data in the blocks being erased.

Erase Resume (ER) Instruction. If

an

Erase

Suspend instruction was previously executed, the

erase operation may be resumed by giving the

command 30h, at any address, and without any

Coded cycles.

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