MRFG35002N6T1 datasheet(2/12 Pages) FREESCALE

Part #	MRFG35002N6T1

Description	Gallium Arsenide PHEMT RF Power Field Effect Transistor

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Manufacturer	FREESCALE [Freescale Semiconductor, Inc]

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RF Device Data

Freescale Semiconductor

MRFG35002N6T1

Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Saturated Drain Current

(VDS = 3.5 Vdc, VGS = 0 Vdc)

IDSS

—

1.7

—

Adc

Off State Leakage Current

(VGS = -0.4 Vdc, VDS = 0 Vdc)

IGSS

—

< 1.0

100

μAdc

Off State Drain Current

(VDS = 6 Vdc, VGS = -2.5 Vdc)

IDSO

—

600

μAdc

Off State Current

(VDS = 28.5 Vdc, VGS = -2.5 Vdc)

IDSX

—

< 1.0

9

mAdc

Gate-Source Cut-off Voltage

(VDS = 3.5 Vdc, IDS = 8.7 mA)

VGS(th)

-1.2

-0.9

-0.7

Vdc

Quiescent Gate Voltage

(VDS = 6 Vdc, ID = 65 mA)

VGS(Q)

-1.1

-0.8

-0.6

Vdc

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 6 Vdc, IDQ = 65 mA, Pout = 158.5 mW Avg., f = 3550 MHz,

Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.

PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain

Gps

8.5

10

—

dB

Drain Efficiency

hD

23

27

—

%

Adjacent Channel Power Ratio

ACPR

—

-41

-38

dBc

Typical RF Performance (In Freescale Test Fixture, 50 οhm system) VDD = 6 Vdc, IDQ = 65 mA, f = 3550 MHz

Output Power, 1 dB Compression Point, CW

P1dB

—

1.5

—

W

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