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MRFG35002N6T1 Datasheet(PDF) 6 Page - Freescale Semiconductor, Inc

Part # MRFG35002N6T1
Description  Gallium Arsenide PHEMT RF Power Field Effect Transistor
PDF  12 Pages
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Manufacturer  FREESCALE [Freescale Semiconductor, Inc]
Direct Link  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

MRFG35002N6T1 Datasheet(HTML) 6 Page - Freescale Semiconductor, Inc

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6
RF Device Data
Freescale Semiconductor
MRFG35002N6T1
TYPICAL CHARACTERISTICS
NOTE: Data is generated from the test circuit shown.
30
4
14
0
0
50
Pout, OUTPUT POWER (dBm)
Figure 5. Single-Carrier W-CDMA Power Gain
and Drain Efficiency versus Output Power
40
12
10
8
20
6
30
VDS = 6 Vdc, IDQ = 65 mA, f = 3550 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
12
18
24
610
Gps
ηD
30
−60
−20
0
−25
−5
IRL
ACPR
Pout, OUTPUT POWER (dBm)
Figure 6. Single-Carrier W-CDMA ACPR and
Input Return Loss versus Output Power
−30
−40
−50
−15
6
−10
12
18
24
VDS = 6 Vdc, IDQ = 65 mA, f = 3550 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
−20


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